It is shown that both devices can be modelled within reasonable accuracy with the proposed VHDL-AMS radiation aware bipolar transistor model.ĪB - This paper presents an application of the VHDL-AMS modelling language to the characterisation of gamma-radiation effects on bipolar transistors is presented. The transistor has been exposed to these radiations in the biased condition and the collector characteristics and forward current gain have been measured as a. Two different devices were modelled with this approach, a COTS matched pair bipolar transistor and a commercially available 0.35um SiGe BiCMOS process. The influence of combined Co-60 gamma radiation total ionization dose (TID) and conducted electromagnetic interference (EMI) in bipolar transistors. It is shown that the gamma-radiation induced effects on the transistor's performance can be modelled by implementing a specific set of model parameters as dose dependent functions. The characteristics showing increased saturation voltage of a bipolar transistor after neutron-gamma irradiation is presented in Figure 2.12. The model is based on the Gummel-Poon bipolar transistor model and takes the radiation induced effects into account on parameter level. 11 Accumulated dose effects are characterized by. Based on TCAD, the synergistic radiation effects of ionizing/displacement damage caused by mixed neutrons and gamma rays are simulated. Parametric Shifts in CMOS and Bipolar Devices. But the mechanism of the synergistic radiation effect between the two rays is still unclear. We present the dose-rate effect and emitter size effect of DPSA bipolar transistors under gamma ray irradiation. N2 - This paper presents an application of the VHDL-AMS modelling language to the characterisation of gamma-radiation effects on bipolar transistors is presented. Transistors working in complex radiation environments such as space are simultaneously irradiated by neutrons and gamma rays. T1 - Modelling of Gamma-Radiation Effects in Bipolar Transistors with VHDL-AMS
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